Simplified EPFL GaN HEMT Model

2024/09/05 by Farzan Jazaeri, Jazaeri, Farzan, Majid Shalchian +11
Engineering · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2409.03589

openalex publication_date 2024/09/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.

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