2023/04/10 by Md Tahmidul Alam, Alam, Md Tahmidul, Chirag Gupta +1
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.2304.04648
openalex publication_date 2023/04/10 · openalex created_date 2023/04/12 · openalex updated_date 2026/07/28
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V and 915V respectively. Inclusion of field plates near both the gates produced electric field peaks at the opposite ends of the transistor simultaneously. This resulted in better electric field management or higher blocking voltage per unit length. Consequently, the 675V monolithic bidirectional HEMT had an impressive 40% improvement in on-resistance than its 650V typical series/parallel counterpart.