2024/10/21 by Md Tahmidul Alam, Swarnav Mukhopadhyay, Alam, Md Tahmidul +7
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Induction Heating and Inverter Technology #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.2410.16218
openalex publication_date 2024/10/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~20 ohm.mm or ~11 mili ohm.cm2. Breakdown voltage was optimized by utilizing two field plates in either side of the transistor and optimizing their geometry. Shorter first field plate lengths (less than 2 micron) resulted in higher breakdown voltage and the possible reason for this was discussed. The transistors had a steep subthreshold swing of 92 mV / dec. The on/off ratio was greater than 105 and it was limited by the tool capacity. The fabricated 3 kV transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage and on resistance, that showed crucial progress.