Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

2013/06/18 by Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri +7 · 1 citation
Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Semiconductor materials and devices #Semiconductor Quantum Structures and Devices

paper · doi:10.1109/ted.2013.2265320

Abstract

We present an accurate and robust surface-potential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs). An accurate analytical surface-potential calculation, which we developed, is used to develop the drain and gate current model. The model is in excellent agreement with experimental data for both drain and gate current in all regions of device operation. We show the correct physical behavior and mathematical robustness of the model by performing various benchmark tests, such as DC and AC symmetry tests, reciprocity test, and harmonic balance simulations test. To the best of our knowledge, this is the first time a GaN HEMT compact model passing a range of benchmark tests has been presented.

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• Characteristics Prediction and Optimization of GaN CAVET Using a Novel Physics-Guided Machine Learning Method. [europepmc]

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