2024/04/03 by Muhammad Farooq Saleem, Saleem, Muhammad Farooq, Ghulam Abbas Ashraf +9
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Optics (physics.optics) #Photonic and Optical Devices #Terahertz technology and applications
paper · pdf · doi:10.48550/arxiv.2404.02398
openalex publication_date 2024/04/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.