2010/09/02 by P. Nouvel, J. Torres, Nouvel, P. +18
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Other Condensed Matter (cond-mat.other) #Photonic and Optical Devices #Terahertz technology and applications #cond-mat.mes-hall #cond-mat.other
paper · pdf · doi:10.48550/arxiv.1009.0426
Under review in Phys. Rev. B
openalex publication_date 2010/09/02 · arxiv created 2011/07/21 · arxiv updated 2011/07/22 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the channel at the frequency f0 of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f0± 10 GHz (with f0 from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. Numerical results support that such a high quality of the emission resonances can be explained by the approach of an instability in the transistor channel.