2013/07/16 by K. Shinokita, Keisuke Shinokita, Hideki Hirori +18
Engineering · Physics and Astronomy · #FOS: Physical sciences #Gyrotron and Vacuum Electronics Research #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Terahertz technology and applications #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1307.4151
Accepted for publication in Phys. Rev. Lett.(2013)
arxiv created 2013/07/16 · openalex publication_date 2013/07/16 · arxiv updated 2013/07/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.