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Terahertz response of optically excited semiconductors

2003/06/13 by M. Kira, Kira, M., W. Hoyer +3
Engineering · Physics and Astronomy · #Atomic physics #Condensed matter physics #Excited state #FOS: Physical sciences #Field (mathematics) #Laser #Materials science #Optics #Optoelectronics #Photonic Crystals and Applications #Physics #Plasmon #Quantum mechanics #Resonance (particle physics) #Semiconductor #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Symmetry (geometry) #Symmetry breaking #Terahertz radiation #Terahertz spectroscopy and technology #Terahertz technology and applications #Ultrashort pulse #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/0306352

5 pages, 3 figures

arxiv created 2003/06/13 · openalex publication_date 2003/06/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The induced terahertz response of semiconductor systems is investigated with a microscopic theory. In agreement with recent terahertz experiments, the developed theory fully explains the ultrafast build up of the plasmon resonance and the slow formation of incoherent excitonic populations. For incoherent conditions, it is shown that a terahertz field exclusively probes the correlated electron-hole pairs via a symmetry breaking between many-body correlations with even and odd functional form.

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