Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

2010/11/15 by F. Blanchard, D. Golde, Blanchard, F. +20
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Strong Light-Matter Interactions #Terahertz technology and applications #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1011.3307

arxiv created 2010/11/15 · openalex publication_date 2010/11/15 · arxiv updated 2010/11/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.

Related

• Terahertz response of optically excited semiconductors
• Probing Electronic Motion and Core Potential by Coulomb-reshaped Terahertz Radiation
• Enhanced spatial resolution of Terahertz spectroscopy via semiconductor\n photoexcitation
• Intrinsic temporal and spectral mixing in time-resolved terahertz spectroscopy
• THz emission from ultrafast optical orientation