2023/10/17 by Pipat Harata, Harata, Pipat, Wipada Hongthong +3
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.2310.11128
openalex publication_date 2023/10/17 · openalex created_date 2023/10/21 · openalex updated_date 2026/07/28
We present a novel approach for calculating the Coulomb Blockade Phase Diagram (CBPD) in the experimentally accessible strong coupling regime of a single-electron transistor (SET). Our method utilizes the Path Integral Monte Carlo (PIMC) technique to accurately compute the Coulomb oscillation of the Differential Capacitance (DC). Furthermore, we investigate the impact of the gate voltage and temperature variations on the DC, thereby gaining insights into the system's behaviour. As a result, we propose a method to calculate the Coulomb Blockade Boundary Line (CBBL) and demonstrate its efficacy by setting the visibility parameter to 10%. The resulting boundary line effectively defines the transition between the Coulomb and non-Coulomb blockade regimes, thereby enabling the construction of a comprehensive CBPD.