2005/11/28 by Johann Sée, Sée, Johann, Philippe Dollfus +7 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0511652
37 pages, 9 figures, submitted to Journal of Computational Electronics
arxiv created 2005/11/28 · openalex publication_date 2005/11/28 · arxiv updated 2009/12/01 · openalex created_date 2022/10/01 · openalex updated_date 2026/07/28
The purpose of this article is to present an accurate way, based on a physical description, to simulate Coulomb blockade devices. The method underlying the simulations depends only on fundamental parameters of the system and does not require the use of high level fitting parameters as tunneling conductances contrary to number of current Coulomb blockade simulators. It lies mainly on the transfer Hamiltonian formalism and Bardeen's formula within the framework of effective mass tensor. It can be applied to metallic Coulomb blockade devices as well as semiconductor ones. The details of this method are extensively reviewed from a theoretical point of view and the main results are presented. In particular, we study how to obtain tunneling rates information to deduce current/voltage characteristics of Metal-Insulator-Metal-Insulator-Metal (MIMIM) and Metal-Insulator-Si Quantum Dot-Insulator-Metal (MISiIM) structures.