2002/04/30 by Serguei Vorojtsov, SERGUEI VOROJTSOV
Chemistry · Materials Science · Physics and Astronomy · #Advanced Materials and Semiconductor Technologies #Advanced Physical and Chemical Molecular Interactions #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1142/s0217979204026706
published as International Journal of Modern Physics B, Vol. 18, No. 30 (2004) 3915-3940 · RevTex, 13 pages, 13 figures
arxiv created 2004/10/20 · openalex publication_date 2004/12/10 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels in a grain in the sequential tunneling approximation. In the case of spinless electrons, our theory describes transport through a dot in the quantum Hall regime. In the case of spin-½ electrons, we analyze the line shape of a peak, shift in the position of the peak's maximum as a function of temperature and the values of the conductance in the odd and even valleys.