1996/07/19 by K. Flensberg, Flensberg, K., L. W. Molenkamp +1
Engineering · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9607138
15 pages, LateX, with 6 figures embedded using epsf. To be published in Frontiers in Nanoscale Sciences of Micron/Submicron Devices, Eds. A. P. Jauho, E. V. Buzaneva, and I. F. Koval, NATO Series E: Applied Sciences, Kluwer Academic Press
arxiv created 1996/07/19 · openalex publication_date 1996/07/19 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a connecting point contact. Second, we measure the dependence of the charging energy on the conductance of the barriers. The experiments are compared with traces obtained from a theory based on a Luttinger liquid type description. This theory predicts a scaling behaviour of the charging energy, in good agreement with our experiments.