2005/10/18 by Fay E. Hudson, F. E. Hudson, Hudson, F. E. +14
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0510488
accepted into the proceedings of MNE 2005 in Microelectronic Engineering
openalex publication_date 2005/10/18 · arxiv created 2006/02/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the device a 50 nm diameter island, containing ~600 donors and having a metallic density of states, is separated from source and drain leads by undoped silicon tunnel barriers. The central island and tunnel barriers are covered by a surface gate in a field effect transistor geometry allowing the coupling between the leads and island to be controlled. Coulomb blockade due to charging of the doped island is measured, the oscillation period is observed to be constant while the charging energy is dependent on the surface gate voltage. We discuss the possibilities of approaching the few electron regime in these structures, with the aim of observing and manipulating discrete quantum mechanical states.