An ion-implanted silicon single-electron transistor

2005/10/14 by V. C. Chan, V. Chan, Chan, V. C. +21
Chemistry · Engineering · Physics and Astronomy · #CMOS #Chemistry #Coulomb blockade #Electrical engineering #Electron #Engineering #FOS: Physical sciences #Fabrication #Ion #Ion implantation #Materials science #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optoelectronics #Photonic and Optical Devices #Physics #Quantum and electron transport phenomena #Silicon #Silicon on insulator #Surface and Thin Film Phenomena #Transistor #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0510373

3 pages, 3 figures

arxiv created 2005/10/14 · openalex publication_date 2005/10/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e²/2C_Σ ∼ 250 μeV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.

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