2005/05/11 by Bhavtosh Bansal, Bansal, Bhavtosh, M. R. Gokhale +5
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0505305
4 pages, 3 figures
arxiv created 2005/05/11 · openalex publication_date 2005/05/11 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to proceed via two distinct pathways: through (i) an abrupt appearance of quantum dots as expected in the usual Stranski-Krastanov growth picture and (ii) a continuous evolution of small surface features into well developed quantum dots. The average size of the features in both these families increases with coverage, leading to a bimodal distribution in dot sizes at an intermediate stage of growth evolution that eventually becomes a unimodal distribution as more material is deposited. Complementary information obtained from independent measurements of photoluminescence spectra and surface morphology is correlated and is found to be consistent with the picture of growth proposed.