2002/10/27 by T. Raz, Tal Raz, Raz, T. +6
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Condensed Matter (cond-mat) #FOS: Physical sciences #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/0210594
13 pages, including 3 figures and references list
arxiv created 2002/10/27 · openalex publication_date 2002/10/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
InAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer photoluminescence spectrum is composed of distinct spectral peaks, resulting from the discrete distribution of the dot heights. The dot height distribution depends on the total amount of InAs deposited and on the Ga content of the strained GaxIn1-xP layer underneath. Our experimental results are corroborated by an 8 band k(dot)P model calculations. In particular, we identify and quantify the diffusion of Ga from the GaxIn1-xP layer into the quantum dots.