2023/01/26 by Yury Berdnikov, Berdnikov, Yury, Paweł Holewa +15
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2301.11008
openalex publication_date 2023/01/26 · openalex created_date 2023/01/28 · openalex updated_date 2026/07/28
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between 107 and 1010 cm-2. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.