2015/07/21 by Algirdas Mekys, Mekys, Algirdas, Vytautas Rumbauskas +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Silicon and Solar Cell Technologies #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1507.05825
arxiv created 2015/07/21 · openalex publication_date 2015/07/21 · arxiv updated 2015/07/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The large scale various shapes and orientation defects influence into carrier scattering was theoretically analyzed using Monte Carlo method and compared to the experimental measurements. It was shown how the large scale defects screen themselves from the interaction with free charge carriers. The comparison of quantum and classical transport regimes was performed.