2023/10/06 by Andrew Y. Joe, Joe, Andrew Y., Kateryna Pistunova +21 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Semiconductor materials and interfaces
paper · pdf · doi:10.48550/arxiv.2310.04624
openalex publication_date 2023/10/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Employing flux-grown single crystal WSe2, we report charge carrier scattering behaviors measured in h-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility μ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.