Scattering of band carriers by neutral and charged impurities

2010/11/18 by l. I. Bolko, Bolko, l. I.
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Optical and Acousto-Optic Technologies #Solid-state spectroscopy and crystallography #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1011.4203

10 pages, 6 figures

arxiv created 2010/11/18 · openalex publication_date 2010/11/18 · arxiv updated 2010/11/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Mobility of band carriers scattered on donors, partially ionized, partially neutral, is considered in general and calculated for crystals belonging to AIII-BV group. As neutral impurity we have constructed the hydrogen-like model. It is shown that dependence of mobility on temperature is determined by relation between number of ionized and neutral donors and by average energy of electrons.

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