Electron affinity of tin measured by photodetachment microscopy

2013/06/10 by Mickaël Vandevraye, Cyril Drag, Christophe Blondel · 3 citations
Physics and Astronomy · Chemistry · Engineering · #Atomic and Molecular Physics #Mass Spectrometry Techniques and Applications #Ion-surface interactions and analysis #Tin #Excitation #Ion #Atomic physics #Electron affinity (data page) #Laser #Caesium #Sputtering #Materials science #Electron #Wavelength #Analytical Chemistry (journal) #Chemistry #Optoelectronics #Optics #Nanotechnology #Physics #Molecule #Thin film #Nuclear physics

paper · doi:10.1088/0953-4075/46/12/125002

openalex publication_date 2013/06/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

A beam of Sn − ions produced by a caesium sputtering ion source is photodetached in the presence of an electric field, with a single-mode ring Ti:Sa laser. The laser wavelength, about 806 nm, is set just above the excitation threshold of the 3 P 2 , highest fine-structure sublevel of the 3 P ground-term of Sn I. The photoelectron energy is measured by photodetachment microscopy. The measured photodetachment threshold is 1239 711.8 (11) m −1 , from which an improved value of the electron affinity of tin can be deduced: 896 944.7 (13) m −1 or 1.112 070 (2) eV.

Citations

• Binding energies in atomic negative ions
• Theoretical study for the electron affinities of negative ions with the MCDHF method
• Pulsed photodetachment microscopy and the electron affinity of iodine
• Electron spectrometry at the µeV level and the electron affinities of Si and F
• Binding Energies in Atomic Negative Ions: III

Cited by

• Intra-cavity photodetachment microscopy and the electron affinity of germanium
• Electron affinity of lead
• Electron affinity (data page) [wikipedia]