Electron spectrometry at the µeV level and the electron affinities of Si and F

2001/04/11 by Christophe Blondel, C. Delsart, Fabienne Goldfarb · 5 citations
Materials Science · Engineering · Physics and Astronomy · Chemistry · #Electron and X-Ray Spectroscopy Techniques #Ion-surface interactions and analysis #X-ray Spectroscopy and Fluorescence Analysis #Affinities #Electron affinity (data page) #Silicon #Ion #Electron #Fluorine #Chemistry #Analytical Chemistry (journal) #Atomic physics #Stereochemistry #Physics #Nuclear physics #Molecule #Chromatography #Organic chemistry

paper · doi:10.1088/0953-4075/34/9/101

openalex publication_date 2001/04/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

Photodetachment microscopy of the negative ions Si - and F - has made it possible to measure the electron affinities of silicon and fluorine with improved accuracy. The new recommended electron affinities of 28 Si and 19 F are 11 207.252(18) and 27 432.446(19) cm -1 , i.e. 1.389 5220(24) and 3.401 1895(25) eV, respectively.

Citations

• Binding Energies in Atomic Negative Ions: III

Cited by

• Photodetachment microscopy to an excited spectral term and the electron affinity of phosphorus
• Theoretical study for the electron affinities of negative ions with the MCDHF method
• Electron affinity of tin measured by photodetachment microscopy
• Effect of a magnetic field in photodetachment microscopy
• Electron affinity (data page) [wikipedia]