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Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride

2014/09/29 by S. Engels, Stephan Engels, B. Terrés +14 · 16 citations
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Analytical Chemistry (journal) #Annealing (glass) #Bilayer graphene #Chemistry #Composite material #Doping #Graphene #Graphene research and applications #Hexagonal boron nitride #Materials science #Nanotechnology #Optics #Optoelectronics #Quantum and electron transport phenomena #Raman spectroscopy #cond-mat.mes-hall

paper · pdf · doi:10.1002/pssb.201451384

published in physica status solidi (b) 251(12), 2545-2550 (Wiley) · 6 pages, 4 figures

openalex publication_date 2014/09/29 · arxiv created 2018/05/04 · arxiv updated 2018/05/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We present a thermal annealing study on single‐layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D‐sub‐peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D‐peak and the G‐peak positions.

Citations