2016/05/31 by Sebastian Wenderoth, Jakob Bätge, R. Härtle +1 · 33 citations
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Chemistry #Condensed matter physics #Conductance #Magnetic field #Master equation #Molecular Junctions and Nanostructures #Physics #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Robustness (evolution) #Spin (aerodynamics) #Spin valve #Statistical physics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.94.121303
published in Physical review. B./Physical review. B 94(12) (American Physical Society) · 5 pages, 7 figures, revised version
openalex created_date 2016/06/24 · arxiv created 2016/09/15 · openalex publication_date 2016/09/26 · arxiv updated 2016/10/05 · openalex updated_date 2026/08/05
We study sharp peaks in the conductance-voltage characteristics of a double quantum dot and a quantum dot spin valve that are located around zero bias. The peaks share similarities with a Kondo peak but can be clearly distinguished, in particular as they occur at high temperatures. The underlying physical mechanism is a strong current suppression that is quenched in bias-voltage dependent ways by exchange interactions. Our theoretical results are based on the quantum master equation methodology, including the Born-Markov approximation and a numerically exact, hierarchical scheme, which we extend here to the spin-valve case. The comparison of exact and approximate results allows us to reveal the underlying physical mechanisms, the role of first-, second- and beyond-second-order processes and the robustness of the effect.