2010/07/31 by Andrea Donarini, Georg Begemann, Milena Grifoni
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.82.125451
published as Physical Review B, 82, 125451 (2010) · 10 pages, 9 figures. Corrected typos and updated references
arxiv created 2010/09/13 · openalex publication_date 2010/09/28 · arxiv updated 2011/08/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We consider nanojunctions in the single-electron tunneling regime which, due to a high degree of spatial symmetry, have a degenerate many-body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism to give necessary and sufficient conditions for interference blockade also in the presence of spin-polarized leads. As an example we analyze a triple quantum-dot single-electron transistor. For a setup with parallel polarized leads, we show how to selectively prepare the system in each of the three states of an excited spin triplet without application of any external magnetic field.