2009/10/27 by Piotr Trocha, Ireneusz Weymann, J. Barnaś +1 · 39 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Conductance #Differential (mechanical device) #Ferromagnetism #Magnetic field #Magnetic properties of thin films #Magnetoresistance #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Tunnel magnetoresistance #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.80.165333
published in Physical Review B 80(16) (American Physical Society) · 12 pages, 13 figures
openalex publication_date 2009/10/27 · arxiv created 2009/11/02 · arxiv updated 2015/05/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear conductances, and tunnel magnetoresistance are calculated using the real-time diagrammatic technique in the parallel, serial, and intermediate geometries. The effects due to virtual tunneling processes between the two dots via the leads, associated with off-diagonal coupling matrix elements, are also considered. Negative differential conductance and negative tunnel magnetoresistance have been found in the case of serial and intermediate geometries, while no such behavior has been observed for double quantum dots coupled in parallel. It is also shown that transport characteristics strongly depend on the magnitude of the off-diagonal coupling matrix elements.