2015/07/10 by Yilin Wang, Shudong Xiao, Xinghan Cai +4
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Annealing (glass) #Band gap #Charge carrier #Chemical physics #Chemistry #Cluster (spacecraft) #Condensed matter physics #Conductivity #Doping #Graphene #Graphene research and applications #Iridium #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #Thermal properties of materials #cond-mat.mes-hall
paper · pdf · doi:10.1038/srep15764
published as Scientific Reports 5, 15764 (2015)
arxiv created 2015/07/10 · openalex publication_date 2015/07/10 · arxiv updated 2016/04/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7 K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ~100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.