2008/07/16 by Hideki Okamoto, Naoko Kawasaki, Yumiko Kaji +3 · 3 citations
Engineering · #Organic Electronics and Photovoltaics #Thin-Film Transistor Technologies #Semiconductor materials and devices
paper · doi:10.1021/ja803291a
openalex publication_date 2008/07/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/16
A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The mu increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.