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Spin Manipulation in Graphene by Chemically Induced Pseudospin Polarization

2016/03/02 by Dinh Van Tuan, Stephan Roche
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Asymmetry #Chemistry #Condensed matter physics #Electron #Ferromagnetism #Graphene #Graphene research and applications #Impurity #Materials science #Molecular Junctions and Nanostructures #Nanosecond #Physics #Point reflection #Polarization (electrochemistry) #Quantum and electron transport phenomena #Quantum mechanics #Spin (aerodynamics) #Spin Hall effect #Spin engineering #Spin polarization #Spinplasmonics #Spintronics #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.116.106601

published as Phys. Rev. Lett. 116, 106601 (2016) · Physical Review Letters (to appear)

arxiv created 2016/03/02 · openalex publication_date 2016/03/09 · arxiv updated 2016/03/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation, but so far new paradigms and demonstrators are limited. Here we show that certain impurities such as fluorine adatoms, which locally break sublattice symmetry without the formation of strong magnetic moment, could result in a remarkable variability of spin transport characteristics. The impurity resonance level is found to be associated with a long-range sublattice pseudospin polarization, which by locally decoupling spin and pseudospin dynamics provokes a huge spin lifetime electron-hole asymmetry. In the dilute impurity limit, spin lifetimes could be tuned electrostatically from 100 ps to several nanoseconds, providing a protocol to chemically engineer an unprecedented spin device functionality.

Citations