Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

2015/10/08 by V. V. Belykh, A. Greilich, D. R. Yakovlev +4 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1103/physrevb.92.165307

published as Phys. Rev. B 92, 165307 (2015) · 7 pages, 5 figures

arxiv created 2015/10/08 · arxiv updated 2015/10/09

Abstract

We extend the range of quantum dot (QD) emission energies where electron and hole g factors have been measured to the practically important telecom range. The spin dynamics in InAs/In_0.53Al_0.24Ga_0.23As self-assembled QDs with emission wavelengths at about 1.6 μm grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field are observed from which the corresponding g factors are determined. The electron g factor of about -1.9 has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the g factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.

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• Initialization of Neutral and Charged Exciton Spin States in a Telecom-Emitting Quantum Dot
• Complete coherent control of spin qubits in self-assembled InAs quantum dots under oblique magnetic fields

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