Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

2023/11/06 by E. Evers, Evers, E., Nataliia E. Kopteva +15 · 3 citations
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2311.03047

openalex publication_date 2023/11/06 · openalex created_date 2023/11/08 · openalex updated_date 2026/07/28

Abstract

We report measurements of the longitudinal and transverse spin relaxation times of holes in an ensemble of self-assembled InAs/InAlGaAs quantum dots (QDs), emitting in the telecom spectral range. The spin coherence of a single carrier is determined using spin mode-locking in the inhomogeneous ensemble of QDs. Modeling the signal allows us to extract the hole spin coherence time to be in the range of T₂ = 0.02-0.4 μs. The longitudinal spin relaxation time T₁ = 0.5 μs is measured using the spin inertia method.

Cited by

• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots
• Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect
• Spin properties in droplet epitaxy-grown telecom quantum dots

Related

• A Spin-Photon Interface in the Telecom C-Band with Long Hole Spin Dephasing Time
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots
• Optical investigations of quantum-dot spin dynamics
• Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect
• Spin relaxation and decoherence of holes in quantum dots