2025/07/08 by Marius Cizauskas, Cizauskas, Marius, Elisa Maddalena Sala +9 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · doi:10.48550/arxiv.2507.06058
openalex publication_date 2025/07/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g-factors of |ge| = 0.934 and |gh| = 0.471, with the electron g-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T1 = 2.95 μs, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.