2018/07/04 by Ryosuke Matsusaki, R. Matsusaki, Matsusaki, R. +6
Computer Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Quantum-Dot Cellular Automata #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1807.01413
6 pages, 3 figures
arxiv created 2018/07/04 · openalex publication_date 2018/07/04 · arxiv updated 2018/07/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The electron and hole g factors are the key quantities for the spin manipulations in semiconductor quantum nanostructures. However, for the individual nanostructures, the separate determination including the signs of those g factors is difficult by using some methods adopted conventionally in bulks and quantum wells. We report a convenient optical method for the sign identification of out-of-plane g factors in the individual quantum nanostructures, which utilizes the optically-induced nuclear spin switch. The method is demonstrated in typical single self-assembled In0.75Al0.25As/Al0.3Ga0.7As quantum dots and InAs/GaAs quantum rings, where the g factors with the opposite sign for electron and the same sign for hole are proved.