Magnetic oscillation of optical phonon in ABA- and ABC-stacked trilayer graphene

2015/06/05 by Chunxiao Cong, Jeil Jung, Bingchen Cao +5 · 9 citations
Materials Science · Physics and Astronomy · #Antiferromagnetism #Bilayer graphene #Condensed matter physics #Coupling (piping) #Graphene #Graphene research and applications #Materials science #Nanotechnology #Nuclear magnetic resonance #Optics #Phonon #Physics #Quantum and electron transport phenomena #Quantum mechanics #Raman scattering #Raman spectroscopy #Stacking #Topological Materials and Phenomena #cond-mat.mes-hall #physics.optics #van der Waals force

paper · pdf · doi:10.1103/physrevb.91.235403

published in Physical Review B 91(23) (American Physical Society) · 25 pages, 6 figures

openalex publication_date 2015/06/05 · arxiv created 2015/07/02 · arxiv updated 2015/09/21 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity, and linewidth in the magneto-Raman scattering of optical E_2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene (TLG). Whereas in ABA-stacked TLG, we observe magnetophonon oscillations consistent with single-bilayer chiral band doublets, the features are flat for ABC-stacked TLG up to magnetic fields of 9 T. This suppression can be attributed to the enhancement of band chirality that compactifies the spectrum of Landau levels and modifies the magnetophonon resonance properties. The drastically different coupling behavior between the electronic excitations and the E_2g phonons in ABA- and ABC-stacked TLG reflects their different electronic band structures and the electronic Landau level transitions and thus can be another way to determine the stacking orders and to probe the stacking-order-dependent electronic structures. In addition, the sensitivity of the magneto-Raman scattering to the particular stacking order in few-layer graphene highlights the important role of interlayer coupling in modifying the optical response properties in van der Waals layered materials.

Citations

• Dirac fermions in graphene and analogues: magnetic field and topological properties
• Trilayer graphene is a semimetal with a gate-tunable band overlap
• Observation of Anomalous Phonon Softening in Bilayer Graphene
• Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
• Electric Field Effect in Atomically Thin Carbon Films
• Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
• Electronic Structure of Multilayer Graphene