2009/09/25 by W.C.B. Peatman, Erik S. Daniel · 1 citation
Engineering · Physics and Astronomy · #Radio Frequency Integrated Circuit Design #Semiconductor Lasers and Optical Devices #GaN-based semiconductor devices and materials
paper · doi:10.1109/jssc.2009.2029709
openalex publication_date 2009/09/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/22
The five papers selected for this Special Section, chosen in part based on symposium attendee survey feedback, highlight some of the most significant achievements reported at the meeting. The first paper describes a WCDMA base-station power amplifier utilizing GaAs high-voltage HBTs and a wideband envelope tracking system to achieve high power, high linearity performance at higher efficiency than competing technologies. The next two papers demonstrate the remarkable versatility and performance of state-of-the-art GaN technology. The fourth paper presents a SiGe HBT-based 80 GHz voltage-controlled oscillator (VCO) with a very wide tuning rage for applications such as 77 GHz automotive radar. And the final paper describes >100 GHz gain-bandwidth amplifier enabled using a novel wafer bonding approach to heteregeneous integration of InP HBTs and conventional 130 nm CMOS.