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Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier

2025/12/05 by Mi, Junlin, Fan, Ruinan, Yan, Liping +2
Engineering · #Advanced Power Amplifier Design #Applied Physics (physics.app-ph) #Energy Harvesting in Wireless Networks #FOS: Physical sciences #Wireless Power Transfer Systems

paper · doi:10.48550/arxiv.2512.05846

openalex publication_date 2025/12/05 · openalex created_date 2025/12/10 · openalex updated_date 2026/07/28

Abstract

This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator. The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator. Using a harmonic control circuit and a parasitic parameter compensation circuit, the power amplifier operates in the inverse class-F state to achieve high efficiency. The feedback circuit uses a coupled-line coupler instead of the traditional coupling capacitor to control feedback power precisely. The measurement results show that the VCO with an oscillation frequency of 2.41-2.45 GHz achieves a maximum conversion efficiency of 74.5% at 2.44 GHz and an output power of 40.2 dBm. It is a candidate for the microwave source in a wireless power transmission system.

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