2017/06/21 by J. Kang, Jihoon Kang, J.‐S. Moon +1 · 18 citations
Engineering · Physics and Astronomy · #Advanced Power Amplifier Design #Amplifier #Breakdown voltage #CMOS #Cascode #Electrical engineering #Engineering #GaN-based semiconductor devices and materials #Gallium nitride #High-electron-mobility transistor #Materials science #Monolithic microwave integrated circuit #Optoelectronics #Power-added efficiency #RF power amplifier #Radio Frequency Integrated Circuit Design #Transistor #Voltage #Wideband
paper · doi:10.1049/el.2017.1672
published in Electronics Letters 53(17), 1207-1209 (Institution of Engineering and Technology)
openalex publication_date 2017/06/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/23
Wideband high‐power single‐chip X‐band class‐F power amplifier with excellent output performances is reported. In order to achieve high‐power class‐F operation under minimised output capacitance impact at the frequency, high‐voltage operation with minimised device size is pursued and its voltage swing becomes maximised by adopting high breakdown field‐plate (FP) GaN high‐electron‐mobility transistor (HEMT) devices with cascode configuration. For the fabrication, 0.14 µm FP AlGaN/GaN HEMT technology with 58 GHz f T and ∼100 V breakdown is used. Based on on‐wafer test at 44 V V dd, the fabricated class‐F power amplifier delivers maximum 61.1% power added efficiency (PAE) with 9.2 W at 10.2 GHz. With the help of high‐voltage operating cascode devices of minimised size, it also delivers excellent bandwidth of 1.6 GHz at the point of 50% PAE and high‐power density of 4.42 W/mm is demonstrated.