InP HBT Technologies for THz Integrated Circuits

2017/05/02 by Miguel Urteaga, Zach Griffith, Munkyo Seo +3 · 14 citations
Engineering · #Radio Frequency Integrated Circuit Design #Photonic and Optical Devices #Microwave Engineering and Waveguides

paper · doi:10.1109/jproc.2017.2692178

Abstract

Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation ( f max) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.

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