2022/12/29 by Adam Charnas, Jackson Anderson, Jie Zhang +3
Engineering · Materials Science · #Thin-Film Transistor Technologies #Semiconductor materials and devices #ZnO doping and properties
paper · doi:10.1109/ted.2022.3231226
The remarkable dc performance of ultrathin indium oxide transistors offers a path toward high-performance back-end-of-line (BEOL) and monolithically integrated logic and memory devices for next-generation computing. Its very low thermal budget, high reliability, scalability, and 3-D conformality are additional factors that make these devices well-suited for these applications. Here, the radio frequency (RF) performance of indium oxide transistors with a high working frequency is characterized for the first time. A new record high cutoff frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">fT </tex-math></inline-formula> ) among amorphous metal–oxide–semiconductor transistors is reported with simultaneously high maximum oscillation frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">f_\text max </tex-math></inline-formula> ). Detailed statistical measurements across a wide variety of channel lengths and gate overlaps provide insight into optimization of the device parasitics and future scaling trends. Even at relatively long channel lengths of 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">μ m </tex-math></inline-formula> , the operation frequency is sufficient for these devices to function alongside traditional silicon CMOS devices that are generally clocked at less than 5 GHz.