Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties

2025/09/09 by Chuanwei Cheng, Cheng, C. W., John W. Smith +27
Engineering · Materials Science · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Silicon Carbide Semiconductor Technologies #Thin-Film Transistor Technologies

paper · pdf · doi:10.48550/arxiv.2509.07886

openalex publication_date 2025/09/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Guided by a comprehensive analysis of accumulation mode transistor physics and oxide semiconductor materials properties, we demonstrate an innovative oxide semiconductor transistor structure and process flow that break the constraint between performance and reliability observed in conventional InGaZnO4 (IGZO) transistors. The newly proposed 10 nm innovative IGZO transistor features high on-current, high extrinsic mobility (20 cm2V-1s-1), near-zero hysteresis, and only 15 mV Vt shift after positive-bias-stress (PBS) of 3 MV/cm stress for 1000s at room temperature.

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