The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs

2025/03/11 by Hongwei Tang, Tang, Hongwei, Dennis Lin +31 · 1 voice
Engineering · #Optical Systems and Laser Technology #Photonic and Optical Devices #Thin-Film Transistor Technologies

paper · doi:10.1109/led.2025.3549865

openalex publication_date 2025/03/11 · openalex created_date 2025/03/12 · openalex updated_date 2026/07/29

Abstract

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS)∼ ~60mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T =4 K - 300 K) and multi-frequency (f =1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.

Discussions

• doi.org/10.1109/LED.... [bsky, 1 points, 0 comments]

Related

• Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
• In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI
• Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties
• Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation
• Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors