2009/01/01 by Makoto Motoyoshi · 2 citations
Engineering · #3D IC and TSV technologies #Semiconductor materials and devices #Electronic Packaging and Soldering Technologies
paper · doi:10.1109/jproc.2008.2007462
openalex publication_date 2009/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV.