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Electron-Beam Formation from Spin-Orbit Interactions in Zinc-Blende Semiconductor Quantum Wells

2010/09/07 by David H. Berman, Michael E. Flatté
Physics and Astronomy · #Cathode ray #Condensed matter physics #Electron #Isotropy #Magnetic properties of thin films #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Quantum mechanics #Quantum well #Quantum wire #Semiconductor #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.105.157202

arxiv created 2010/09/07 · openalex publication_date 2010/10/05 · arxiv updated 2015/05/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We find a dramatic enhancement of electron propagation along a narrow range of real-space angles from an isotropic source in a two-dimensional quantum well made from a zinc-blende semiconductor. This "electron-beam" formation is caused by the interplay between spin-orbit interaction originating from a perpendicular electric field to the quantum well and the intrinsic spin-orbit field of the zinc-blende crystal lattice in a quantum well, in situations where the two fields are different in strength but of the same order of magnitude. Beam formation is associated with caustics and can be described semiclassically using a stationary phase analysis.

Citations