2002/11/30 by John Schliemann, J. Carlos Egues, Daniel Loss · 11 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Ballistic conduction #Condensed matter physics #Coupling (piping) #Electron #Ferromagnetism #Field (mathematics) #Field-effect transistor #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Rashba effect #Scattering #Spin (aerodynamics) #Spin engineering #Spin polarization #Spin transistor #Spintronics #Spin–orbit interaction #Topological Materials and Phenomena #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.90.146801
published as Phys. Rev. Lett. 90, 146801 (2003) · 4 pages, 2 figures included
arxiv created 2003/03/01 · openalex publication_date 2003/04/08 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.