1970/04/01 by W. S. Boyle, George Smith · 6 citations
Engineering · Mathematics · #Advanced Memory and Neural Computing #Capacitor #Charge (physics) #Charge carrier #Computer science #Electrical engineering #Engineering #Integrated Circuits and Semiconductor Failure Analysis #Layer (electronics) #Materials science #Mathematics #Maxima and minima #Nanotechnology #Optoelectronics #Physics #Quantum mechanics #Reading (process) #Semiconductor #Semiconductor device #Semiconductor materials and devices #Substrate (aquarium) #Voltage
paper · doi:10.1002/j.1538-7305.1970.tb01790.x
openalex publication_date 1970/04/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
In this paper we describe a new semiconductor device concept. Basically, it consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge (representing information) over the surface by moving the potential minima. We discuss schemes for creating, transferring, and detecting the presence or absence of the charge. In particular, we consider minority carrier charge storage at the Si-SiO2interface of a MOS capacitor. This charge may be transferred to a closely adjacent capacitor on the same substrate by appropriate manipulation of electrode potentials. Examples of possible applications are as a shift register, as an imaging device, as a display device, and in performing logic.