1985/05/01 by Kazuya Matsumoto, T. Nakamura, A. Yusa +1 · 1 citation
Engineering · #CCD and CMOS Imaging Sensors #Advanced Semiconductor Detectors and Materials #Advanced Memory and Neural Computing
paper · doi:10.1143/jjap.24.l323
openalex publication_date 1985/05/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/26
A new MOS phototransistor with high optical gain and non-destructive readout operation is proposed as a photosensor in an imaging device. The principle of this device is a conduction mechanism whereby an incident light changes the surface potential under the MOS gate and the electron current flowing in a buried channel is modulated by the surface potential. The device has a saturation exposure value of 0.1 lx·s, saturation output voltage of 500 mV at V DD =2 V, the dynamic range of 50 dB with no signal processing and non-destructive readout operation.