2014/11/10 by Tianyu Ye, W. Wegscheider, R. G. Mani
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4901509
published as Appl. Phys. Lett. 105, 191609 (2014)
openalex publication_date 2014/11/10 · arxiv created 2014/11/19 · arxiv updated 2014/11/20 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. The diagonal resistance Rxx was measured at the fixed magnetic fields of the photo-excited oscillatory extrema of Rxx as a function of both the microwave power, P, and the linear polarization angle, θ. Color contour plots of such measurements demonstrate the evolution of the lineshape of Rxx versus θ with increasing microwave power. We report that the non-linear power dependence of the amplitude of the radiation-induced magnetoresistance oscillations distorts the cosine-square relation between Rxx and θ at high power.