2014/04/08 by Tianyu Ye, Han-Chun Liu, W. Wegscheider +1 · 1 citation
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.89.155307
published as Phys. Rev. B 89, 155307, Published 8 April 2014
openalex publication_date 2014/04/08 · arxiv created 2014/11/19 · arxiv updated 2014/11/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium temperatures. The diagonal resistance was measured with the magnetic field fixed at the extrema of the radiation-induced magnetoresistance oscillations, as the microwave power was varied at a number of microwave polarization angles. The results indicate a nonlinear relation between the oscillatory peak or valley magnetoresistance and the microwave power, as well as a cosine square relation between the oscillatory peak or valley magnetoresistance and the microwave polarization angle. The main features are briefly compared with the predictions of existing models.