Radiation-induced oscillatory magnetoresistance in a tilted magnetic field inGaAs∕AlxGa1−xAsdevices

2005/08/11 by R. G. Mani · 5 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.72.075327

published as Phys. Rev. B 72, 075327 (2005) · 5 pages, 3 color figures, final version

openalex publication_date 2005/08/11 · arxiv created 2005/12/13 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high-mobility two-dimensional electron system (2DES). In analogy to the 2D Shubnikov--de Haas effect, the characteristic field B_f and the period of the radiation-induced magnetoresistance oscillations appear dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component B_\ensuremath\Vert in the range of 0.6<B_\ensuremath\Vert<1.2\phantom\rule0.3em0exT at a tilt angle of \ensuremathθ=80\ifmmode^∘\else\textdegree\fi leaves the oscillatory pattern essentially unchanged.

Cited by

• Magnetoresistance oscillations in two-dimensional electron systems under monochromatic and bichromatic radiations
• Magnetoresistivity modulated response in bichromatic microwave irradiated two dimensional electron systems
• Effect of parallel magnetic field on the zero-differential resistance state
• Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices
• Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power